APT50M75JLLU3 APT50M75JLLU3 ? rev 1 june, 2006 www.microsemi . com 1 ? 8 isotop ? absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. a s g d s ymbol parameter max ratings unit v dss drain - source breakdown voltage 500 v t c = 25c 51 i d continuo us drain current t c = 80c 39 i dm pulsed drain current 204 a v gs gate - source voltage 30 v r dson drain - source on resistance 75 m ? p d maximum power dissipation t c = 25c 290 w i ar avalanche current (repetitive and non repetitive) 51 a e ar repetitive avalanche energy 50 e as single pulse avalanche energy 2500 mj if av maximum average forward current duty cycle=0.5 tc = 80c 30 if rms rms forward current (square wave, 50% duty) 39 a v dss = 500v r dson = 75m ? max @ tj = 25c i d = 51a @ tc = 25c applicatio n ? ac and dc motor control ? switched mode power supplies fe ature s ? power mos 7 ? mosfets - low r dson - low input and miller capacitance - low gate c harge - fast intrinsic reverse diode - avalanche energy rated - very rugged ? isotop ? package (sot-227) ? very low stray inductance ? high level of integration benefits ? outsta ndi ng perfor ma nce at hi gh freq ue nc y operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? very rugged ? low profile ? rohs compliant isotop ? buck chopper mosfet power module a d g s
APT50M75JLLU3 APT50M75JLLU3 ? rev 1 june, 2006 www.microsemi . com 2 ? 8 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 500v t j = 25c 100 i dss zero gate voltage drain current v gs = 0v,v ds = 400v t j = 125c 500 a r ds(on) drain ? source on resistance v gs = 10v, i d = 25.5a 75 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 1ma 3 5 v i gs s gate ? source leakage current v gs = 20 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c is s input capacitance 5590 c oss output capacitance 1180 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 85 pf q g total gate charge 123 q gs gate ? source charge 33 q gd gate ? drain charge v gs = 10v v bus = 250v i d = 51a 65 nc t d(on) tur n-o n delay ti me 10 t r rise time 20 t d(off) turn-off delay time 21 t f fall time resistive switching v gs = 15v v bus = 250v i d = 51a r g = 0.6 ? 5 ns eon tur n-o n switchi ng energy 755 eoff turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 330v i d = 51a, r g = 5 ? 726 j eon tur n-o n switchi ng energy 1241 eoff turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 330v i d = 51a, r g = 5 ? 846 j
APT50M75JLLU3 APT50M75JLLU3 ? rev 1 june, 2006 www.microsemi . com 3 ? 8 chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit i f = 30a 1.6 1.8 i f = 60a 1.9 v f diode forward voltage i f = 30a t j = 125c 1.4 v v r = 600v t j = 25c 250 i rm maximum reverse leakage current v r = 600v t j = 125c 500 a c t junction capacitance v r = 200v 44 pf reverse recovery time i f =1a,v r =30v di/dt =100a/s t j = 25c 23 t j = 25c 85 t rr reverse recovery time t j = 125c 160 ns t j = 25c 4 i rrm maximum reverse recovery current t j = 125c 8 a t j = 25c 130 q rr reverse recovery charge i f = 30a v r = 400v di/dt =200a/s t j = 125c 700 nc t rr reverse recovery time 70 ns q rr reverse recovery charge 1300 nc i rrm maximum reverse recovery current i f = 30a v r = 400v di/dt =1000a/s t j = 125c 30 a thermal and package characteristics symbol characteristic min typ max unit mosfet 0.27 r thjc junction to case thermal resistance diode 1.21 r thja junction to ambient (igbt & diode) 20 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j ,t stg storage temperature range -55 150 t l max lead temp for soldering:0.063? from case for 10 sec 300 c torque mounting torque (mounting = 8-32 or 4mm machine and terminals = 4mm machine) 1.5 n.m wt package weight 29.2 g typical mosfet performance curve
APT50M75JLLU3 APT50M75JLLU3 ? rev 1 june, 2006 www.microsemi . com 4 ? 8
APT50M75JLLU3 APT50M75JLLU3 ? rev 1 june, 2006 www.microsemi . com 5 ? 8
APT50M75JLLU3 APT50M75JLLU3 ? rev 1 june, 2006 www.microsemi . com 6 ? 8 typical diode performance curve
APT50M75JLLU3 APT50M75JLLU3 ? rev 1 june, 2006 www.microsemi . com 7 ? 8
APT50M75JLLU3 APT50M75JLLU3 ? rev 1 june, 2006 www.microsemi . com 8 ? 8 sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) emitter terminals are shorted internally. current handling capability is equal for either emitter terminal. isotop? is a registered trademark of st microelectronics nv m icros e mi re se rve s the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved. source gate drain anode
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